irg5k50p5k50pm06e IRG7T15FF12Z 1 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 absolute maximum ratings of igbt v ces collector to emitter voltage 1200 v v ges continuous gate to emitter voltage 20 v i c continuous collector current t c = 80c 15 a t c = 25c 30 a i cm pulse collector current t j = 175c 30 a p d maximum power dissipation (igbt) t c = 25c, t j = 175c 210 w t j maximum igbt junction temperature 150 c t jop maximum operating junction temperature range - 40 to +150 c t stg - 40 to +125 c storage temperature v ces = 1200v i c = 15a at t c = 80c t sc 10sec v ce(on) = 1.90v at i c = 15a base part number package type standard pack quantity orderable part number IRG7T15FF12Z ez ir pack 1 ? box 80 IRG7T15FF12Z features benefits low v ce(on) and switching losses high efficiency in a wide range of applications 100% rbsoa tested rugged transient performance 10sec short circuit safe operating area ez ir pack 1 ? package industry standard lead free rohs compliant, environmental friendly igbt six - pack ez ir pack 1 ? package applications ? industrial motor drive ? servo drive ? uninterruptible power supply ? ac inverter drive downloaded from: http:///
irg5k50p5k50pm06e IRG7T15FF12Z 2 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 switching characteristics of igbt parameter min. typ. max. unit test conditions t d(on) turn - on delay time 175 ns t j = 25c v cc =600v, i c = 15a, r g = 40?, v ge =15v, inductive load 160 t j = 125c t r rise time 50 ns t j = 25c 55 t j = 125c t d(off) turn - off delay time 140 ns t j = 25c 145 t j = 125c t f fall time 245 ns t j = 25c 380 t j = 125c e on turn - on switching loss 1.74 mj t j = 25c 2.08 t j = 125c e off turn - off switching loss 0.63 mj t j = 25c 1.09 t j = 125c q g total gate charge 140 nc t j = 25c c ies input capacitance 2.00 nf v ce = 25v, v ge = 0v, f 1mhz, t j = 25c c oes output capacitance 0.07 c res reverse transfer capacitance 0.04 rbsoa reverse bias safe operating area trapezoid i c = 30a,v cc = 960v, v p =1200v, r g = 15?, v ge = +15v to 0v, t j = 150c scsoa short circuit safe operating area 10 s v cc = 600v, v ge = 15v, t j = 150c electrical characteristics of igbt at t j = 25 c (unless otherwise specified) parameter min. typ. max. unit test conditions v (br)ces collector to emitter breakdown voltage 1200 v v ge = 0v, i c = 1ma v ge(th) gate threshold voltage 5.0 5.8 6.5 v i c = 0.72ma, v ce = v ge v ce(on) collector to emitter saturation voltage 1.90 2.20 v t j = 25c i c = 15a, v ge = 15v 2.20 v t j = 125c i ces collector to emitter leakage current 1 ma v ge = 0v, v ce = v ces i ges gate to emitter leakage current 400 na v ge = 20v, v ce = 0 downloaded from: http:///
irg5k50p5k50pm06e IRG7T15FF12Z 3 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 absolute maximum ratings of freewheeling diode v rrm repetitive peak reverse voltage 1200 v i f diode continuous forward current, t c = 25c 30 a diode continuous forward current, t c = 80c 15 i fm pulse diode current 30 a ntc - thermistor characteristic values typ. max. unit parameter r 25 t c =25c 5 k? ? r/r t c =100c r 100 =481? 5 % p 25 t c =25c 50 mw b 25/50 r 2 =r 25 exp[b 25/50 (1/t 2 - 1/(298.15k))] 3380 k b 25/80 r 2 =r 25 exp[b 25/80 (1/t 2 - 1/(298.15k))] 3440 k module characteristics min. typ. max. unit parameter v iso isolation voltage (all terminals shorted), f = 50hz, 1minute 2500 v r jc junction - to - case (igbt) 0.725 c/w r jc junction - to - case (diode) 1.280 c/w r cs case - to - sink (conductive grease applied) 0.1 c/w m mounting screw: m5 1.5 2.0 nm g weight 24 g electrical and switching characteristics of freewheeling diode parameter typ. unit test conditions max. v f forward voltage 2.00 v t j = 25c i f = 15a , v ge = 0v 2.70 2.20 t j = 125c i rr peak reverse recovery current 12 a t j = 25c i f 15 a, di/dt=370a/ s, v rr = 600v, v ge = - 15v 15 t j = 125c q rr reverse recovery charge 0.94 c t j = 25c 1.64 t j = 125c e rec reverse recovery energy 0.37 mj t j = 25c 0.76 t j = 125c downloaded from: http:///
irg5k50p5k50pm06e IRG7T15FF12Z 4 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 fig.1 typical igbt saturation characteristics fig.2 typical igbt output characteristics fig.3 typical diode forward characteristics fig. 4 typical capacitance characteristics fig.5 typical switching loss vs. collector current fig.6 typical switching loss vs. gate resistance 0 5 10 15 20 25 30 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ge =15v t j =125c t j =25c v ce (v) i c (a) 0 5 10 15 20 25 30 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 t j =125c v ge =17v v ge =15v v ge =13v v ge =11v v ge =9v v ce (v) i c (a) 0 5 10 15 20 25 30 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ge =0v t j =125c t j =25c v f (v) i f (a) 0 5 10 15 20 25 0 1 2 3 4 5 v ce = 0 v,f=1mhz c ies c oes c (nf) v ce (v) 0 5 10 15 20 25 30 0 1 2 3 4 v cc =600v,v ge =+/-15v, rg =40 ohm,t j =125c e off e on e rec e (mj) i c (a) 35 40 45 50 55 60 65 0 1 2 3 4 v cc =600v,v ge =+/-15v, i c =15a ,t j =125c e off e on e rec e (mj) rg ( ? ) downloaded from: http:///
irg5k50p5k50pm06e IRG7T15FF12Z 5 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 fig.7 typical load current vs. frequency fig.8 reverse bias safe operation area (rbsoa) fig. 11 ntc temperature characteristics fig.9 typical transient thermal impedance (igbt) fig.10 typical transient thermal impedance (diode) 0 5 10 15 20 25 30 35 1 10 100 duty cycle:50% t j =125c t c =80c r g =40 ohm,v ge =15v frequency (khz) load current (a) square wave: diode as specified v cc i 0 200 400 600 800 1000 1200 0 10 20 30 i c (a) v ces (v) module chip 0.001 0.01 0.1 1 2 0.0 0.2 0.4 0.6 0.8 1.0 z th jc (k/w) t ( s ) z th jc :igbt 0.001 0.01 0.1 1 2 0.0 0.3 0.6 0.9 1.2 1.5 1.8 z th jc ( k/w ) t (s) z th jc :diode 0 10 20 30 40 50 60 70 80 90 100 110 120 0 2 4 6 8 10 12 14 16 18 20 r ( k ohm ) t c (c) rtyp downloaded from: http:///
irg5k50p5k50pm06e IRG7T15FF12Z 6 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 internal circuit: package outline (unit: mm): qualification information ? qualification level industrial moisture sensitivity level not applicable rohs compliant yes ? qualification standards can be found at international rectifie rs web site: http://www.irf.com/product - info/reliability/ ir world headquarters: 101 north sepulveda blvd, el segundo, california, 90245, usa to contact international rectifier, please visit: http://www.irf.com/whoto - call/ downloaded from: http:///
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